演講/活動
2019-11-22 17:16:42Patty Chen(2019.12.4 Talk) Red InGaN-LEDs Grown By Micro-Flow Channel MOVPE
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Time：Dec. 4, 2019 Wednesday 16:00 - 17:30PM
Venue：R108, 1F Engineering Building 4, NCTU
交通大學工程四館一樓108室(知新廳)
Speaker：Prof. Kazuhiro Ohkawa
Electrical Engineering, Computer, Electrical and Mathematical
Sciences and Engineering Division, King Abdullah University of Science and Technology, Saudi Arabia
Host：Prof. Horng, Ray-Hua 洪瑞華
Chairman, Dept. of Electronics Engineering, NCTU
Language： English
Abstract：
The development of three primary colors (RGB) InGaN LEDs will be the key technology to realize monolithic full-color lighting and displays in the near future. We have developed micro-flow channel MOVPE that can grow high-In-content InGaN at raised temperatures of 60-100oC compared to conventional MOVPEs. Simulations of the micro-flow channel method show increases in the gas-phase concentrations of decomposed molecules from TMIn and NH3 precursors. Higher concentrations have made it possible to achieve the raised growth temperatures. Alternatively, more In-content InGaN layers were grown at specific temperatures. For example, a typical growth temperature of 600-nm InGaN LED structures is about 710oC, but we have achieved the temperature of 810oC for such InGaN by using the micro-flow channel MOVPE and the strain control. It was confirmed that the quantum efficiency of InGaN QWs by the micro-flow channel method is higher than that of InGaN by the conventional way in the longer wavelength region than green. A bare 620-nm InGaN LED grown by the micro-flow channel MOVPE exhibited 0.23 mW of output and 51 nm FWHM at 20 mA. More technologies will be discussed in the presentation.
Time：Dec. 4, 2019 Wednesday 16:00 - 17:30PM
Venue：R108, 1F Engineering Building 4, NCTU
交通大學工程四館一樓108室(知新廳)
Speaker：Prof. Kazuhiro Ohkawa
Electrical Engineering, Computer, Electrical and Mathematical
Sciences and Engineering Division, King Abdullah University of Science and Technology, Saudi Arabia
Host：Prof. Horng, Ray-Hua 洪瑞華
Chairman, Dept. of Electronics Engineering, NCTU
Language： English
Abstract：
The development of three primary colors (RGB) InGaN LEDs will be the key technology to realize monolithic full-color lighting and displays in the near future. We have developed micro-flow channel MOVPE that can grow high-In-content InGaN at raised temperatures of 60-100oC compared to conventional MOVPEs. Simulations of the micro-flow channel method show increases in the gas-phase concentrations of decomposed molecules from TMIn and NH3 precursors. Higher concentrations have made it possible to achieve the raised growth temperatures. Alternatively, more In-content InGaN layers were grown at specific temperatures. For example, a typical growth temperature of 600-nm InGaN LED structures is about 710oC, but we have achieved the temperature of 810oC for such InGaN by using the micro-flow channel MOVPE and the strain control. It was confirmed that the quantum efficiency of InGaN QWs by the micro-flow channel method is higher than that of InGaN by the conventional way in the longer wavelength region than green. A bare 620-nm InGaN LED grown by the micro-flow channel MOVPE exhibited 0.23 mW of output and 51 nm FWHM at 20 mA. More technologies will be discussed in the presentation.
