演講/活動
2018-12-21 10:46:04陳秋雲(2018.12.24)#TALK Compound Semiconductor Seminar Series——#WELCOME ALL TO COME ~~~
#TALK Compound Semiconductor Seminar Series——Lectured by Prof. Debdeep Jena and Prof. Huili Grace Xing
#WELCOME ALL TO COME ~~~
Talk 1:
Time: December 24, 2018(Monday) am: 10:00- 11:00
Venue: NCTU MicroInfo Research Center, Room 201 (See Map: https://goo.gl/PPQgMF)
Speaker: Cornell University, Prof. Debdeep Jena
Title: Wide Bandgap Semiconductors for Future Classical and Quantum Information Systems
Talk 2:
Time: December 24, 2018(Monday) am: 11:00- 12:00
Venue: NCTU MicroInfo Research Center, Room 201 (See Map: https://goo.gl/PPQgMF)
Speaker: Cornell University, Prof. Huili Grace Xing
Title: High Performance Electronics for Communication, Power Management, and Beyond
#ABSTRACT
#Wide Bandgap Semiconductors for Future Classical and Quantum Information Systems
Semiconductor materials and technologies power much of today’s information systems, from computation to communication, and storage. As some of these systems based on Silicon approach physical limits, new materials such as wide bandgap nitride semiconductors are ushering in unexpected benefits to extend their capabilities. By virtue of favorable electron transport, internal polarization fields due to broken inversion symmetry, and high breakdown electric fields due to large bandgaps, nitride transistors offer unmatched performance, extending ultrafast RF electronics to high voltages, and simultaneously making high voltage switching fast and energy-efficient. Several new physical phenomena have been discovered in the past 5 years, with promise of integration to boost the nitride electronic devices ecosystem. The same wide bandgap nitride semiconductors are exceptional classical light emitters, and further probing of their properties are showing the presence of physical properties of ferroelectricity, superconductivity and other ferroic correlated phenomena, which point towards exciting future possibilities in both classical and quantum information systems. I will discuss these current and future possibilities rooted in recent experiments and theory in our group.
#High Performance Electronics for Communication, Power Management, and Beyond
Our increasing reliance on electricity for functioning in our daily lives leads to an endless quest for energy-efficient and high-performance devices to generate, distribute, store and convert electricity to other forms of energy or information. The III-V nitride semiconductor family is one of the electronic materials that has quickly filled up many voids of human quests Silicon helped to create in the past 30 years or so: solid state lighting, miniature base stations for superior wireless coverage, and all at unprecedentedly high performance. In the past 10+ years, wide bandgap oxides such as Ga2O3 (Eg>4.5 eV), and layered materials such as WSe2 (semiconductor), NbS2 (superconductor) have been touted for applications beyond thin-film transistors. Large-size electronic-grade single-crystalline Ga2O3 substrates can be prepared by techniques similar to that to prepare sapphire and quartz. The facile processes to prepare layered materials and heterostructures have enabled an unprecedented number of scientists and engineers in history to interrogate this material group, aiming to answer what new physics can be found and what new applications can be explored. In this talk, I will discuss several examples based on these materials systems investigated in our group power management, energy-efficient logic etc.
#WELCOME ALL TO COME ~~~
Talk 1:
Time: December 24, 2018(Monday) am: 10:00- 11:00
Venue: NCTU MicroInfo Research Center, Room 201 (See Map: https://goo.gl/PPQgMF)
Speaker: Cornell University, Prof. Debdeep Jena
Title: Wide Bandgap Semiconductors for Future Classical and Quantum Information Systems
Talk 2:
Time: December 24, 2018(Monday) am: 11:00- 12:00
Venue: NCTU MicroInfo Research Center, Room 201 (See Map: https://goo.gl/PPQgMF)
Speaker: Cornell University, Prof. Huili Grace Xing
Title: High Performance Electronics for Communication, Power Management, and Beyond
#ABSTRACT
#Wide Bandgap Semiconductors for Future Classical and Quantum Information Systems
Semiconductor materials and technologies power much of today’s information systems, from computation to communication, and storage. As some of these systems based on Silicon approach physical limits, new materials such as wide bandgap nitride semiconductors are ushering in unexpected benefits to extend their capabilities. By virtue of favorable electron transport, internal polarization fields due to broken inversion symmetry, and high breakdown electric fields due to large bandgaps, nitride transistors offer unmatched performance, extending ultrafast RF electronics to high voltages, and simultaneously making high voltage switching fast and energy-efficient. Several new physical phenomena have been discovered in the past 5 years, with promise of integration to boost the nitride electronic devices ecosystem. The same wide bandgap nitride semiconductors are exceptional classical light emitters, and further probing of their properties are showing the presence of physical properties of ferroelectricity, superconductivity and other ferroic correlated phenomena, which point towards exciting future possibilities in both classical and quantum information systems. I will discuss these current and future possibilities rooted in recent experiments and theory in our group.
#High Performance Electronics for Communication, Power Management, and Beyond
Our increasing reliance on electricity for functioning in our daily lives leads to an endless quest for energy-efficient and high-performance devices to generate, distribute, store and convert electricity to other forms of energy or information. The III-V nitride semiconductor family is one of the electronic materials that has quickly filled up many voids of human quests Silicon helped to create in the past 30 years or so: solid state lighting, miniature base stations for superior wireless coverage, and all at unprecedentedly high performance. In the past 10+ years, wide bandgap oxides such as Ga2O3 (Eg>4.5 eV), and layered materials such as WSe2 (semiconductor), NbS2 (superconductor) have been touted for applications beyond thin-film transistors. Large-size electronic-grade single-crystalline Ga2O3 substrates can be prepared by techniques similar to that to prepare sapphire and quartz. The facile processes to prepare layered materials and heterostructures have enabled an unprecedented number of scientists and engineers in history to interrogate this material group, aiming to answer what new physics can be found and what new applications can be explored. In this talk, I will discuss several examples based on these materials systems investigated in our group power management, energy-efficient logic etc.
